Published on June 2015 | Low Power Electronics, Tunnel FET, Nanoelectronics

High-k double gate junctionless tunnel FET with a tunable bandgap

In the present work, the performance of a heterostructure double gate junctionless tunnel FET (HJL-DGTFET) having a tunable source bandgap has been analyzed using a 2D simulation technique. The tunable source HJL-DGTFET shows a high ON-current (≈ 6.5 × 10−5 A μm−1) and a very low OFF-current (≈ 4.8 × 10−17 A μm−1). The device shows a point subthreshold slope ≈ 36.2 to 26.8 mV per decade and the average subthreshold slope ≈ 86.1 to 84.2 mV per decade for 0.0–40.0% Ge-mole fractions at room temperature with an ION/IOFF ratio of 1012. The excellent switching characteristics and steeper subthreshold slope at room temperature indicate that this is a promising candidate for the replacement of bulk MOSFETs. In this article, the optimization of device parameters such as the oxide thickness (tox), gate dielectric material and spacer has also been discussed in detail.